inchange semiconductor isc product specification isc silicon pnp darlington power transistor bdw64/a/b/c/d description collector current -i c = - 6a high dc current gain-h fe = 750(min.)@ i c = -2a complement to type bdw63/a/b/c/d applications designed for audio output stages and general amplifier and switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit bdw64 -45 bdw64a -60 BDW64B -80 bdw64c -100 v cbo collector-base voltage bdw64d -120 v bdw64 -45 bdw64a -60 BDW64B -80 bdw64c -100 v ceo collector-emitter voltage bdw64d -120 v v ebo emitter-base voltage -5 v i c collector current-continuous -6 a i b b base current-continuous -0.1 a collector power dissipation @ t a =25 2 p c collector power dissipation @ t c =25 60 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 2.08 /w rth j-c thermal resistance, junction to case 62.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor bdw64/a/b/c/d electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdw64 -45 bdw64a -60 BDW64B -80 bdw64c -100 v (br)ceo collector-emitter breakdown voltage bdw64d i c = -30ma; i b = 0 -120 v v ce(sat)-1 collector-emitter saturation voltage i c = -2a; i b = -12ma b -2.5 v v ce(sat)-2 collector-emitter saturation voltage i c = -6a; i b = -60ma b -4.0 v v be( on ) base-emitter on voltage i c = -2a; v ce = -3v -2.5 v v ecf c-e diode forward voltage i f = -6a -3.5 v bdw64 v ce = -30v; i b = 0 b bdw64a v ce = -30v; i b = 0 b BDW64B v ce = -40v; i b = 0 b bdw64c v ce = -50v; i b = 0 b i ceo collector cutoff current bdw64d v ce = -60v; i b = 0 b -0.5 ma bdw64 v cb = -45v; i e = 0 v cb = -45v; i e = 0; t j = 150 -0.2 -5.0 bdw64a v cb = -60v; i e = 0 v cb = -60v; i e = 0; t j = 150 -0.2 -5.0 BDW64B v cb = -80v; i e = 0 v cb = -80v; i e = 0; t j = 150 -0.2 -5.0 bdw64c v cb = -100v; i e = 0 v cb = -100v; i e = 0; t j = 150 -0.2 -5.0 i cbo collector cutoff current bdw64d v cb = -120v; i e = 0 v cb = -120v; i e = 0; t j = 150 -0.2 -5.0 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -2.0 ma h fe-1 dc current gain i c = -2a; v ce = -3v 750 20000 h fe-2 dc current gain i c = -6a; v ce = -3v 100 switching times t on turn-on time 1.0 s t off turn-off time i c = -3a; i b1 = -i b2 = -12ma; v be(off) = -4.5v, r l =10 5.0 s isc website www.iscsemi.cn 2
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